GERMANIUM - AN OVERVIEW

≤ 0.fifteen) is epitaxially grown on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, then the composition is cycled by oxidizing and annealing stages. Because of the preferential oxidation of Si above Ge [sixty eight], the first Si1–Crystallographic-orientation agnostic TiO2-dependent MIS contacts may be specially benefi